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專利授權區

專利授權區
專利名稱(中)	儲能元件及其電流收集器的製造方法
專利名稱(英)	ENERGY STORAGE DEVICE AND METHOD OF MANUFACTURING CURRENT COLLECTOR THEREOF
專利家族	中華民國：(公開號)
專利權人	財團法人工業技術研究院 50.00% ,國立清華大學 50.00%
發明人	胡啟章,古皓宇,施宏欣,黃昆平
技術領域	材料化工,能源科技

專利摘要(中)
一種儲能元件之電流收集器的製造方法，包括以下步驟：提供基板；以及利用微波電漿化學氣相沉積製程，形成修飾層於基板上。修飾層包括奈米石墨烯，且修飾層的厚度為1奈米至500奈米。在微波電漿化學氣相沉積製程中，微波頻率為300兆赫至300吉赫，微波功率為500瓦至75000瓦，溫度為25oC至600oC，沉積時間小於30分鐘。微波電漿化學氣相沉積製程包括以下步驟：通入惰性氣體或是安定氣體；通入碳氫氣體與氫氣；施加微波，以產生電漿；離子化碳氫氣體與氫氣；以及形成奈米石墨烯於基板上。

專利摘要(中)

一種儲能元件之電流收集器的製造方法，包括以下步驟：提供基板；以及利用微波電漿化學氣相沉積製程，形成修飾層於基板上。修飾層包括奈米石墨烯，且修飾層的厚度為1奈米至500奈米。在微波電漿化學氣相沉積製程中，微波頻率為300兆赫至300吉赫，微波功率為500瓦至75000瓦，溫度為25oC至600oC，沉積時間小於30分鐘。微波電漿化學氣相沉積製程包括以下步驟：通入惰性氣體或是安定氣體；通入碳氫氣體與氫氣；施加微波，以產生電漿；離子化碳氫氣體與氫氣；以及形成奈米石墨烯於基板上。

專利摘要(英)
A method of manufacturing a current collector of an energy storage device includes the following steps: providing a substrate; and using a microwave plasma chemical vapor deposition process to form a modification layer on the substrate. The modified layer includes nanographene, and a thickness of the modified layer is 1 nanometer to 500 nanometers. In the microwave plasma chemical vapor deposition process, a microwave frequency is 300 MHz to 300 GHz, a microwave power is 500 watts to 75,000 watts, a temperature is 25oC to 600oC, and a deposition time is less than 30 minutes. The microwave plasma chemical vapor deposition process includes the following steps: passing inert gas or stable; passing hydrocarbon gas and hydrogen; applying microwave to generate plasma; ionizing the hydrocarbon gas and the hydrogen; and forming nanographene on the substrate.

專利摘要(英)

A method of manufacturing a current collector of an energy storage device includes the following steps: providing a substrate; and using a microwave plasma chemical vapor deposition process to form a modification layer on the substrate. The modified layer includes nanographene, and a thickness of the modified layer is 1 nanometer to 500 nanometers. In the microwave plasma chemical vapor deposition process, a microwave frequency is 300 MHz to 300 GHz, a microwave power is 500 watts to 75,000 watts, a temperature is 25oC to 600oC, and a deposition time is less than 30 minutes. The microwave plasma chemical vapor deposition process includes the following steps: passing inert gas or stable; passing hydrocarbon gas and hydrogen; applying microwave to generate plasma; ionizing the hydrocarbon gas and the hydrogen; and forming nanographene on the substrate.

聯絡資訊
承辦人姓名	李馥如
承辦人電話	03-5715131 #34576
承辦人Email	fujulee@mx.nthu.edu.tw