| A semiconductor structure is proposed. The semiconductor structure includes a pad layer, a groove, a gate and two protection parts. The groove passes through the pad layer in a direction. The gate is T-shaped, disposed on the pad layer, and extends into the groove. The gate includes a first part and a second part. The first part is disposed on the pad layer and includes two side walls and a first metal layer. The second part is connected to the first part and is located in the groove. The two protection parts cover the two side walls respectively, so that the first metal layer is disposed between the two protection parts. Thus, the semiconductor structure can prevent the device characteristics from being affected. |