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專利名稱(中) 半導體結構及其形成方法
專利名稱(英) SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
專利家族 中華民國:I912921
美國:2026-0075919(公開號)
專利權人 國立清華大學 100.00%
發明人 黃敬源,李宗霖,徐碩鴻
技術領域 通信傳輸,資訊工程,電子電機
專利摘要(中)
本揭示內容提供一種半導體結構包含一襯墊層、一溝槽、一閘極以及二保護部。溝槽沿一方向穿過襯墊層。閘極呈T型,設置於襯墊層,並往溝槽中延伸。閘極包含一第一部及一第二部。第一部設置於襯墊層,並包含二側壁及一第一金屬層。第二部連接第一部,位於溝槽中。二保護部分別覆蓋二側壁,以使第一金屬層設置於二保護部之間。藉此,避免元件特性受到影響。
專利摘要(英)
A semiconductor structure is proposed. The semiconductor structure includes a pad layer, a groove, a gate and two protection parts. The groove passes through the pad layer in a direction. The gate is T-shaped, disposed on the pad layer, and extends into the groove. The gate includes a first part and a second part. The first part is disposed on the pad layer and includes two side walls and a first metal layer. The second part is connected to the first part and is located in the groove. The two protection parts cover the two side walls respectively, so that the first metal layer is disposed between the two protection parts. Thus, the semiconductor structure can prevent the device characteristics from being affected.
聯絡資訊
承辦人姓名 李曉琪
承辦人電話 03-5715131 #31061
承辦人Email hsiaochi@mx.nthu.edu.tw
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