專利授權區國立清華大學國際產學營運總中心 Operations Center for Industry Collaboration

搜尋專利授權區

關鍵字

» 新增關鍵字

選單

專利授權區

專利授權區
專利名稱(中)	半導體元件及其製造方法
專利名稱(英)	SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
專利家族	中華民國：I890422 美國：2025-0338526(公開號)
專利權人	國立清華大學 100.00%
發明人	黃敬源,王浩然
技術領域	光電光學

專利摘要(中)
一種半導體元件，包括基底以及多個單元。每一單元包括漂移層、鰭、第一摻雜區、第二摻雜區、第一摻雜柱以及第一閘極結構。漂移層位於所述基底的第一表面上。鰭位於所述漂移層的第一表面上。第一摻雜區位於所述鰭中，從所述鰭的頂面向所述所述漂移層延伸。第二摻雜區位於所述基底中，從所述基底的第二表面向所述基底的所述第一表面延伸。第一摻雜柱位於所述所述漂移層中，從所述漂移層的所述第一表面向所述漂移層的第二表面延伸。第一閘極結構在所述第一摻雜區與所述第一摻雜柱之間，且在所述鰭的第一側壁並延伸至所述漂移層的所述第一表面上。

專利摘要(中)

一種半導體元件，包括基底以及多個單元。每一單元包括漂移層、鰭、第一摻雜區、第二摻雜區、第一摻雜柱以及第一閘極結構。漂移層位於所述基底的第一表面上。鰭位於所述漂移層的第一表面上。第一摻雜區位於所述鰭中，從所述鰭的頂面向所述所述漂移層延伸。第二摻雜區位於所述基底中，從所述基底的第二表面向所述基底的所述第一表面延伸。第一摻雜柱位於所述所述漂移層中，從所述漂移層的所述第一表面向所述漂移層的第二表面延伸。第一閘極結構在所述第一摻雜區與所述第一摻雜柱之間，且在所述鰭的第一側壁並延伸至所述漂移層的所述第一表面上。

專利摘要(英)
A semiconductor device includes a substrate and a plurality of units. Each unit includes drift layer, a fin, a first doped region, a second doped region, a third doped region and a first gate structure. The drift layer is located on a first surface of the substrate. The fin is located on a first surface of the drift layer. The first doped region is located in the fin and extends from a top surface of the fin toward the drift layer. The second doped region is located in the substrate and extends from a second surface of the substrate to the first surface of the substrate. The third doped region is located in the drift layer and extends from the first surface of the drift layer to a second surface of the drift layer. The first gate structure is disposed between the first doped region and the third doped region, on a first lower sidewall of the fin and extending to the first surface of the drift layer.

專利摘要(英)

A semiconductor device includes a substrate and a plurality of units. Each unit includes drift layer, a fin, a first doped region, a second doped region, a third doped region and a first gate structure. The drift layer is located on a first surface of the substrate. The fin is located on a first surface of the drift layer. The first doped region is located in the fin and extends from a top surface of the fin toward the drift layer. The second doped region is located in the substrate and extends from a second surface of the substrate to the first surface of the substrate. The third doped region is located in the drift layer and extends from the first surface of the drift layer to a second surface of the drift layer. The first gate structure is disposed between the first doped region and the third doped region, on a first lower sidewall of the fin and extending to the first surface of the drift layer.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw