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專利授權區

專利授權區
專利名稱(英)	Method to deposit particles on charge storage apparatus with charge patterns and forming method for charge patterns
專利家族	美國：7,803,261
專利權人	國立清華大學 100%
發明人	曾賢德,果尚志
技術領域	能源科技,電子電機

專利摘要(中)
The present invention discloses a method to deposit particles on a charge storage apparatus with charge patterns and a forming method for charge patterns. The forming method for charge patterns includes providing the charge storage apparatus having an electrically conducting substrate and a charge storage media layer. The charge storage apparatus is disposed in a vacuum or an anhydrous environment. An electrode and the electrically conducting substrate are utilized to conduct a first voltage and a second voltage respectively to form an electric field. Charges are then stored into the charge storage media layer of the charge storage apparatus through the electric field and the charge patterns are then formed. Accordingly, particles are deposited on the charge pattern-defined areas.

專利摘要(中)

The present invention discloses a method to deposit particles on a charge storage apparatus with charge patterns and a forming method for charge patterns. The forming method for charge patterns includes providing the charge storage apparatus having an electrically conducting substrate and a charge storage media layer. The charge storage apparatus is disposed in a vacuum or an anhydrous environment. An electrode and the electrically conducting substrate are utilized to conduct a first voltage and a second voltage respectively to form an electric field. Charges are then stored into the charge storage media layer of the charge storage apparatus through the electric field and the charge patterns are then formed. Accordingly, particles are deposited on the charge pattern-defined areas.

聯絡資訊
承辦人姓名	周家鳳
承辦人電話	03-5715131 #34576
承辦人Email	cf.chou@mx.nthu.edu.tw