專利授權區 | |
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專利名稱(英) | Method for Preparing IGZO Particles and Method for Preparing IGZO Film by Using the IGZO Particles |
專利家族 |
中華民國:I415794 美國:8,278,140 |
專利權人 | 國立清華大學 100% |
發明人 | 周更生,高振裕,楊雅惠,楊士禮 |
技術領域 | 材料化工 |
專利摘要(中) |
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A method for preparing IGZO particles and a method for preparing an IGZO thin film by using the IGZO particles are disclosed. The method for preparing the IGZO particles comprises the following steps: (A) providing a solution of metal acid salts, which contains a zinc salt, an indium salt, and a gallium salt; (B) mixing the solution of the metal acid salts with a basic solution to obtain an oxide precursor; and (C) heating the oxide precursor to obtain IGZO particles. |
聯絡資訊 | |
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承辦人姓名 | 鍾弦靜 |