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專利授權區
專利名稱(英)	Method of Fabricating Silicon Carbide(SiC) Layer
專利家族	中華民國：I449087 美國：7,763,529
專利權人	國立清華大學 100%
發明人	陳建成,黃智方,黃振昌,陳威佑
技術領域	材料化工

專利摘要(中)
A method of fabricating a silicon carbide (SiC) layer is disclosed, which comprises steps: (S1) heating a silicon-based substrate at a temperature of X .degree. C.; (S2) carburizating the silicon-based substrate with a first hydrocarbon-containing gas at a temperature of Y .degree. C. to form a carbide layer on the silicon-based substrate; (S3) annealing the silicon-based substrate with the carbide layer thereon at a temperature of Z .degree. C.; and (S4) forming a silicon carbide layer on the carbide layer with a second hydrocarbon-containing gas and a silicon-containing gas at a temperature of W .degree. C.; wherein, X is 800 to 1200; Y is 1100 to 1400; Z is 1200 to 1500; W is 1300 to 1550; and X＜Y.ltoreq.Z.ltoreq.W. In the method of the present invention, since no cooling steps between respective steps are required, the full process time can be reduced and the cost is lowered because no energy consumption occurs for the cooling and the re-heating steps.

專利摘要(中)

A method of fabricating a silicon carbide (SiC) layer is disclosed, which comprises steps: (S1) heating a silicon-based substrate at a temperature of X .degree. C.; (S2) carburizating the silicon-based substrate with a first hydrocarbon-containing gas at a temperature of Y .degree. C. to form a carbide layer on the silicon-based substrate; (S3) annealing the silicon-based substrate with the carbide layer thereon at a temperature of Z .degree. C.; and (S4) forming a silicon carbide layer on the carbide layer with a second hydrocarbon-containing gas and a silicon-containing gas at a temperature of W .degree. C.; wherein, X is 800 to 1200; Y is 1100 to 1400; Z is 1200 to 1500; W is 1300 to 1550; and X＜Y.ltoreq.Z.ltoreq.W. In the method of the present invention, since no cooling steps between respective steps are required, the full process time can be reduced and the cost is lowered because no energy consumption occurs for the cooling and the re-heating steps.

專利摘要(英)
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聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw