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專利授權區

專利授權區
專利名稱(中)	半導體結構
專利名稱(英)	Semiconductor structure
專利家族	中華民國：202335309(公開號) 大陸：CN116666452A(公開號) 美國：2023-0275161(公開號)
專利權人	國立清華大學 100%
發明人	黃智方,胡家瑋,許甫任
技術領域	電子電機

專利摘要(英)
The present invention discloses a semiconductor structure, comprising: a Schottky diode structure, the Schottky diode structure comprises: a first N-type semiconductor layer, a first trench, a first insulating layer, at least two polysilicon layer (Poly-Si), a first P-type protective layer and a metal layer; the first trench extends through the first N-type semiconductor layer and is disposed in the first N-type semiconductor layer; the first insulating layer is disposed in the first trench; at least two polysilicon layers are disposed in the first trench, the upper polysilicon layer and the lower polysilicon layer are parallel, and the first insulating layer is located in the first trench; the first P-type protective layer is grounded and disposed on the bottom of the first trench, and the first p-type protective layer contacts the first insulating layer and the bottom surface of the lower polysilicon layer; the metal layer is respectively disposed on an upper surface and a lower bottom surface of the semiconductor structure, the metal layer respectively formed a source electrode and a drain electrode as electrodes for the external connection of the semiconductor structure; the metal layer covers the first trench, and has a Schottky junction at the junction of the metal layer and the top of the first N-type semiconductor layer; an accumulated electrons region is formed outside the first insulating layer; wherein, the interface between the bottom surface of the P-type protective layer and the first N-type semiconductor layer has a PN junction.

專利摘要(英)

The present invention discloses a semiconductor structure, comprising: a Schottky diode structure, the Schottky diode structure comprises: a first N-type semiconductor layer, a first trench, a first insulating layer, at least two polysilicon layer (Poly-Si), a first P-type protective layer and a metal layer; the first trench extends through the first N-type semiconductor layer and is disposed in the first N-type semiconductor layer; the first insulating layer is disposed in the first trench; at least two polysilicon layers are disposed in the first trench, the upper polysilicon layer and the lower polysilicon layer are parallel, and the first insulating layer is located in the first trench; the first P-type protective layer is grounded and disposed on the bottom of the first trench, and the first p-type protective layer contacts the first insulating layer and the bottom surface of the lower polysilicon layer; the metal layer is respectively disposed on an upper surface and a lower bottom surface of the semiconductor structure, the metal layer respectively formed a source electrode and a drain electrode as electrodes for the external connection of the semiconductor structure; the metal layer covers the first trench, and has a Schottky junction at the junction of the metal layer and the top of the first N-type semiconductor layer; an accumulated electrons region is formed outside the first insulating layer; wherein, the interface between the bottom surface of the P-type protective layer and the first N-type semiconductor layer has a PN junction.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw