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專利授權區
專利名稱(中)	離子敏感場效電晶體及其製造方法
專利名稱(英)	ION SENSITIVE FIELD EFFECT TRANSISTOR AND PRODUCTION METHOD THEREOF
專利家族	中華民國：I400443 美國：8,008,691
專利權人	國立清華大學 100%
發明人	果尚志,葉哲良
技術領域	電子電機

專利摘要(中)
The present invention discloses an ion sensitive field effect transistor, comprising: a GaN/sapphire layer, used as a substrate; an a-InN:Mg epilayer, deposited on the GaN/sapphire layer, used to provide a current path; a first metal contact, deposited on the a-InN:Mg epilayer to provide drain contact; and a second metal contact, deposited on the a-InN:Mg epilayer to provide source contact; and a patterned insulating layer, used to cover the first metal contact, the second metal contact and the a-InN:Mg epilayer, wherein the patterned insulating layer has a contact window defining an exposure area of the a-InN:Mg epilayer.

專利摘要(中)

The present invention discloses an ion sensitive field effect transistor, comprising: a GaN/sapphire layer, used as a substrate; an a-InN:Mg epilayer, deposited on the GaN/sapphire layer, used to provide a current path; a first metal contact, deposited on the a-InN:Mg epilayer to provide drain contact; and a second metal contact, deposited on the a-InN:Mg epilayer to provide source contact; and a patterned insulating layer, used to cover the first metal contact, the second metal contact and the a-InN:Mg epilayer, wherein the patterned insulating layer has a contact window defining an exposure area of the a-InN:Mg epilayer.

聯絡資訊
承辦人姓名	施惠婷