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專利授權區

專利授權區
專利名稱(英)	Method for Forming Substrates for MOS Transistor Components and Its Products
專利家族	中華民國：I303677 美國：7,678,633
專利權人	國立清華大學 100%
發明人	李昆育,李毅君,洪銘輝,郭瑞年,李威縉,吳彥達,張翔筆
技術領域	電子電機

專利摘要(中)
The present invention provides a method for forming substrates for MOS (metal oxide semiconductor) transistor, comprising the following steps: (A) In a reduced-pressure environment having a pressure lower than 1.times.10.sup.-6 Torr, a base for accomplishing the surface reconstruction and a solid-state metal oxide source is provided, wherein the solid-state metal oxide source is chosen from the group consisting of the following: hafnium oxide, aluminum oxide, scandium oxide, yttrium oxide, titanium oxide, gallium gadolinium oxide and metal oxides of rare earth elements; and (B) vaporize the solid-state metal oxide source in order to make the solid-state metal oxide source become a metal oxide molecular beam and, in a working substrate temperature that is required to achieve an amorphous state of a first metal oxide film, deposit on the base having an amorphous state so as to further fabricate a substrate for MOS transistors.

專利摘要(中)

The present invention provides a method for forming substrates for MOS (metal oxide semiconductor) transistor, comprising the following steps: (A) In a reduced-pressure environment having a pressure lower than 1.times.10.sup.-6 Torr, a base for accomplishing the surface reconstruction and a solid-state metal oxide source is provided, wherein the solid-state metal oxide source is chosen from the group consisting of the following: hafnium oxide, aluminum oxide, scandium oxide, yttrium oxide, titanium oxide, gallium gadolinium oxide and metal oxides of rare earth elements; and (B) vaporize the solid-state metal oxide source in order to make the solid-state metal oxide source become a metal oxide molecular beam and, in a working substrate temperature that is required to achieve an amorphous state of a first metal oxide film, deposit on the base having an amorphous state so as to further fabricate a substrate for MOS transistors.

專利摘要(英)
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聯絡資訊
承辦人姓名	周家鳳
承辦人電話	03-5715131 #34576
承辦人Email	cf.chou@mx.nthu.edu.tw