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專利授權區
專利名稱(英)	Phase-change recording media based on the Ga-Sb-Te system for ultra-high density optical recording
專利家族	美國：7,371,448
專利權人	國立清華大學 100%
發明人	李乾銘,金重勳
技術領域	材料化工

專利摘要(中)
This invention discloses a novel rewritable phase－change recording medium for optical data storage, which is based on the GaSbTe ternary alloy system. The designed compositions reside on the Sb.sub.7Te.sub.3－－GaSb and Sb.sub.2Te.sub.3－－GaSb pseudo－binary tielines, and the claimed region can be expressed by the formula (Sb.sub.xTe.sub.100－x).sub.1－z(Ga.sub.ySb.sub.100－y).sub.z, 35.ltoreq.x.ltoreq.80, 40.ltoreq.y.ltoreq.50, 0.05.ltoreq.z.ltoreq.0.9. The crystallized phase of the GaSbTe films is a single phase after laser annealing, and the crystal structure is hexagonal with continuous variation in lattice constants. The lattice parameters, a is from 4.255 .ANG. to 4.313 .ANG. and c is from 11.200 .ANG. to 11.657 .ANG., corresponding to the c/a ratio 2.60 to 2.73. The crystallization kinetics shows increased crystallization temperature (181 to 327.degree. C.) and activation energy (2.8 to 6.5 eV) with increasing GaSb content. The Sb.sub.7Te.sub.3－rich compositions in the GaSbTe recording media are characteristic of enhanced recrystallization, while those with increasing GaSb content are indicative of higher rate of crystal growth and better erasability. The compositions around Ga.sub.2Sb.sub.5Te.sub.3 exhibit the features of nearly complete erasure and stable cycling performance.

專利摘要(中)

This invention discloses a novel rewritable phase－change recording medium for optical data storage, which is based on the GaSbTe ternary alloy system. The designed compositions reside on the Sb.sub.7Te.sub.3－－GaSb and Sb.sub.2Te.sub.3－－GaSb pseudo－binary tielines, and the claimed region can be expressed by the formula (Sb.sub.xTe.sub.100－x).sub.1－z(Ga.sub.ySb.sub.100－y).sub.z, 35.ltoreq.x.ltoreq.80, 40.ltoreq.y.ltoreq.50, 0.05.ltoreq.z.ltoreq.0.9. The crystallized phase of the GaSbTe films is a single phase after laser annealing, and the crystal structure is hexagonal with continuous variation in lattice constants. The lattice parameters, a is from 4.255 .ANG. to 4.313 .ANG. and c is from 11.200 .ANG. to 11.657 .ANG., corresponding to the c/a ratio 2.60 to 2.73. The crystallization kinetics shows increased crystallization temperature (181 to 327.degree. C.) and activation energy (2.8 to 6.5 eV) with increasing GaSb content. The Sb.sub.7Te.sub.3－rich compositions in the GaSbTe recording media are characteristic of enhanced recrystallization, while those with increasing GaSb content are indicative of higher rate of crystal growth and better erasability. The compositions around Ga.sub.2Sb.sub.5Te.sub.3 exhibit the features of nearly complete erasure and stable cycling performance.

專利摘要(英)
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聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw