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專利授權區

專利授權區
專利名稱(英)	SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
專利家族	中華民國：I808732 美國：2023-0343579(公開號)
專利權人	國立清華大學 100%
發明人	邱博文,葉昭輝
技術領域	光電光學,電子電機

專利摘要(英)
A semiconductor device includes a substrate, a bottom sublayer having a monoatomic layer thickness, disposed on the substrate, located at a bottom of the device, and extending in a horizontal direction, a metal sublayer having a monoatomic layer thickness, overlaying the bottom sublayer in the horizontal direction and electrically connected to the bottom sublayer, a top sublayer having a monoatomic layer thickness, disposed in the horizontal direction and electrically connected to the metal sublayer, and a contact metal layer disposed above the metal sublayer. A top surface of the contact metal layer is higher than a top surface of the top sublayer. Bottom layer contact metal atoms of the contact metal layer directly form corresponding bonds with a metal atom surface of the metal sublayer exposed after a portion of the top sublayer is stripped. Original corresponding bonds are maintained between the metal sublayer and the bottom sublayer.

專利摘要(英)

A semiconductor device includes a substrate, a bottom sublayer having a monoatomic layer thickness, disposed on the substrate, located at a bottom of the device, and extending in a horizontal direction, a metal sublayer having a monoatomic layer thickness, overlaying the bottom sublayer in the horizontal direction and electrically connected to the bottom sublayer, a top sublayer having a monoatomic layer thickness, disposed in the horizontal direction and electrically connected to the metal sublayer, and a contact metal layer disposed above the metal sublayer. A top surface of the contact metal layer is higher than a top surface of the top sublayer. Bottom layer contact metal atoms of the contact metal layer directly form corresponding bonds with a metal atom surface of the metal sublayer exposed after a portion of the top sublayer is stripped. Original corresponding bonds are maintained between the metal sublayer and the bottom sublayer.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw