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專利授權區
專利名稱(英)	Memory Device with a Double Helix Biopolymer Layer and Fabricating Method Thereof
專利家族	中華民國：I458088 美國：8,772,081
專利權人	國立清華大學 100%
發明人	林庭宇,許惟廷,洪毓玨,弗魯克.莉莉安娜
技術領域	材料化工,光電光學

專利摘要(英)
The present invention relates to a write-once and read-many-times memory device and the fabricating method thereof. The structure of the memory device comprises: a substrate, a first electrode, a double helix biopolymer layer and a second electrode, and a plurality of metal nanoparticles are distributed in the double helix biopolymer layer. The first electrode is disposed on the substrate, the double helix biopolymer layer is disposed on the first electrode and the substrate, and the second electrode is disposed on the double helix biopolymer layer. When illuminating, the memory device will produce a low-conductivity state and high-conductivity state for writing data. Later, when a voltage is applied to the first electrode and the second electrode, the data will be read.

專利摘要(英)

The present invention relates to a write-once and read-many-times memory device and the fabricating method thereof. The structure of the memory device comprises: a substrate, a first electrode, a double helix biopolymer layer and a second electrode, and a plurality of metal nanoparticles are distributed in the double helix biopolymer layer. The first electrode is disposed on the substrate, the double helix biopolymer layer is disposed on the first electrode and the substrate, and the second electrode is disposed on the double helix biopolymer layer. When illuminating, the memory device will produce a low-conductivity state and high-conductivity state for writing data. Later, when a voltage is applied to the first electrode and the second electrode, the data will be read.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw