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專利授權區

專利授權區
專利名稱(中)	具反極性結構的無接面電晶體
專利名稱(英)	JUNCTION-LESS TRANSISTOR HAVING REVERSE POLARITY STRUCTURE
專利家族	中華民國：I531066 美國：9,287,361
專利權人	國立清華大學 100.00%
發明人	陳弘斌,韓銘鴻,吳永俊
技術領域	電子電機

專利摘要(中)
A junction-less transistor having an reverse polarity structure includes a substrate, a semiconductor body, a gate and a gate insulation layer. The substrate has a first polarity. The semiconductor body is disposed on the substrate, and includes a drain, a source and a channel section connected between the drain and the source. The gate covers one side of the channel section away from the substrate. The semiconductor body has a second polarity opposite to the first polarity. With the semiconductor body and the substrate respectively having the opposite second polarity and first polarity, a leakage current can be reduced while also lowering element production costs.

專利摘要(中)

A junction-less transistor having an reverse polarity structure includes a substrate, a semiconductor body, a gate and a gate insulation layer. The substrate has a first polarity. The semiconductor body is disposed on the substrate, and includes a drain, a source and a channel section connected between the drain and the source. The gate covers one side of the channel section away from the substrate. The semiconductor body has a second polarity opposite to the first polarity. With the semiconductor body and the substrate respectively having the opposite second polarity and first polarity, a leakage current can be reduced while also lowering element production costs.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw