專利授權區國立清華大學國際產學營運總中心 Operations Center for Industry Collaboration

搜尋專利授權區

關鍵字

» 新增關鍵字

選單

專利授權區

專利授權區
專利名稱(中)	STRUCTURE OF TRENCH METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
專利名稱(英)	STRUCTURE OF TRENCH METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
專利家族	中華民國：I663725 大陸：5167330 美國：10,468,519
專利權人	國立清華大學 100%
發明人	江政毅,黃智方
技術領域	電子電機

專利摘要(英)
A structure of a trench metal-oxide-semiconductor field-effect transistor includes an N-current spread layer (N-CSL) disposed on the N-drift region a split gate structure formed in the gate trench and covered by the insulating layer; and a semiconductor protection layer disposed below the bottom of the trench and adjacent to the N-drift region, wherein the insulating layer is disposed above the semiconductor protection layer to protect the insulating layer from being broken through by an electric field when the structure turns off a bias; wherein the gate is separated from the split gate by the insulating layer to form a predetermined gap; and a depth position of a bottom of the trench gate is deeper than an interface between the P-well and the N-current spread layer.

專利摘要(英)

A structure of a trench metal-oxide-semiconductor field-effect transistor includes an N-current spread layer (N-CSL) disposed on the N-drift region a split gate structure formed in the gate trench and covered by the insulating layer; and a semiconductor protection layer disposed below the bottom of the trench and adjacent to the N-drift region, wherein the insulating layer is disposed above the semiconductor protection layer to protect the insulating layer from being broken through by an electric field when the structure turns off a bias; wherein the gate is separated from the split gate by the insulating layer to form a predetermined gap; and a depth position of a bottom of the trench gate is deeper than an interface between the P-well and the N-current spread layer.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw