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專利授權區


專利授權區
專利名稱(中) 半導體元件及其製造方法
專利名稱(英) SEMICONDUCTOR DEVICES AND MANUFACTURING METHOD THEREOF
專利家族 中華民國:I808732
美國:2023-0343579(公開號)
專利權人 國立清華大學 100%
發明人 邱博文,葉昭輝
技術領域 光電光學,電子電機
專利摘要(英)
A semiconductor device comprising a substrate; a bottom sublayer of single atomic layer thickness disposed on the substrate, at the bottom of the device, and arranged in a horizontal direction; a metal sublayer of single atomic layer thickness overlying the bottom sublayer in a horizontal direction and electrically connected to the bottom sublayer; a top sublayer of single atomic layer thickness disposed in a horizontal direction and electrically connected to a portion of the metal sublayer, wherein the top surface of the contact metal layer is higher than the top surface of the top sublayer, wherein the contact metal atoms of the bottom layer of the contact metal layer form a corresponding bonding with the surface of the exposed metal sublayer by removing the top sublayer, and wherein the original corresponding bonding is maintained between the metal sublayer and the bottom sublayer.
聯絡資訊
承辦人姓名 李曉琪
承辦人電話 03-5715131 #31061
承辦人Email hsiaochi@mx.nthu.edu.tw
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