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專利授權區
專利名稱(中)	異質結構光電催化劑及其製造方法
專利名稱(英)	HETEROSTRUCTURED PHOTOELECTROCATALYST AND METHOD OF FABRICATING THE SAME
專利家族	中華民國：202435965(公開號) 大陸：CN118634840A(公開號) 美國：US20240301574A1(公開號)
專利權人	國立清華大學 100.00%
發明人	嚴大任,陳君彥,毛敬涵
技術領域	能源科技,光電光學

專利摘要(中)
一種異質結構光電催化劑及其製造方法。本發明之異質結構光電催化劑包含由基材、複數根奈米線、複數顆金屬奈米顆粒以及過渡金屬化合物薄膜。基材係由具有第一導電型之半導體材料所形成。複數根奈米線係由半導體材料所形成且形成於基材的上表面上。每一根奈米線其上存在複數顆金屬奈米顆粒中之幾顆金屬奈米顆粒。過渡金屬化合物薄膜係形成以被覆複數根奈米線以及複數顆金屬奈米顆粒。過渡金屬化合物薄膜可以由過渡金屬硫化物、過渡金屬碲化物或過渡金屬硒化物所形成。過渡金屬化合物薄膜具有與第一導電型不同之第二導電型。

專利摘要(中)

一種異質結構光電催化劑及其製造方法。本發明之異質結構光電催化劑包含由基材、複數根奈米線、複數顆金屬奈米顆粒以及過渡金屬化合物薄膜。基材係由具有第一導電型之半導體材料所形成。複數根奈米線係由半導體材料所形成且形成於基材的上表面上。每一根奈米線其上存在複數顆金屬奈米顆粒中之幾顆金屬奈米顆粒。過渡金屬化合物薄膜係形成以被覆複數根奈米線以及複數顆金屬奈米顆粒。過渡金屬化合物薄膜可以由過渡金屬硫化物、過渡金屬碲化物或過渡金屬硒化物所形成。過渡金屬化合物薄膜具有與第一導電型不同之第二導電型。

專利摘要(英)
A heterostructured photoelectrocatalyst and a method of fabricating the same. The heterostructured photoelectrocatalyst according to the invention includes a substrate, a plurality of nano-wires, a plurality of metal nano-particles and a transition metal compound film. The substrate is formed of a semiconductor material with a first conductive type. The plurality of nano-wires are formed of the semiconductor material and formed on an upper surface of the substrate. Each nano-wire thereon exists a few of the plurality of metal nano-particles. The compound film is formed to overlay the plurality of nano-wires and the plurality of metal nano-particles. The transition metal compound film can formed of a transition metal sulfide, a transition metal telluride or a transition metal selenide. The compound film has a second conductive type different from the first conductive type.

專利摘要(英)

A heterostructured photoelectrocatalyst and a method of fabricating the same. The heterostructured photoelectrocatalyst according to the invention includes a substrate, a plurality of nano-wires, a plurality of metal nano-particles and a transition metal compound film. The substrate is formed of a semiconductor material with a first conductive type. The plurality of nano-wires are formed of the semiconductor material and formed on an upper surface of the substrate. Each nano-wire thereon exists a few of the plurality of metal nano-particles. The compound film is formed to overlay the plurality of nano-wires and the plurality of metal nano-particles. The transition metal compound film can formed of a transition metal sulfide, a transition metal telluride or a transition metal selenide. The compound film has a second conductive type different from the first conductive type.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw