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專利名稱(英) | VOLTAGE-ENHANCED-FEEDBACK SENSE AMPLIFIER OF RESISTIVE MEMORY AND OPERATING METHOD THEREOF |
專利家族 |
美國:10,734,039 |
專利權人 | 國立清華大學 100.00% |
發明人 | 林煥庭,張孟凡 |
技術領域 | 電子電機 |
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A voltage-enhanced-feedback sense amplifier of a resistive memory is configured to sense a first bit line and a second bit line. The voltage-enhanced-feedback sense amplifier includes a voltage sense amplifier and a voltage-enhanced-feedback pre-amplifier. The voltage-enhanced-feedback pre-amplifier is electrically connected to the voltage sense amplifier. A first bit-line amplifying module receives a voltage level of the second input node to suppress a voltage drop of the first bit line and amplifies a voltage level of the first input node according to a voltage level of the first bit line. A second bit-line amplifying module receives the voltage level of the first input node to suppress a voltage drop of the second bit line and amplifies the voltage level of the second input node according to a voltage level of the second bit line. A margin enhanced voltage difference is greater than a read voltage difference. |
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承辦人姓名 | 李曉琪 |
承辦人電話 | 03-5715131 #31061 |
承辦人Email | hsiaochi@mx.nthu.edu.tw |