搜尋專利授權區
關鍵字
選單
專利授權區


專利授權區
專利名稱(英) 6T STATIC RANDOM ACCESS MEMORY CELL, ARRAY AND MEMORY THEREOF
專利家族 美國:9,001,571
專利權人 國立清華大學 100%
發明人 陳建甫,張庭豪,山內寬行,張孟凡
技術領域 電子電機
專利摘要(英)
A 6T static random access memory cell, array, and memory thereof are provided, in which the memory cell includes a first inverter, a second inverter, a first access transistor, and a second access transistor. The first inverter and second inverter respectively include a first pull-up transistor, a first pull-down transistor, a second pull-up transistor and a second pull-down transistor. The first pull-down and pull-up transistors each have a drain terminal mutually coupled to form a first node. The second pull-down and pull-up transistors each have a drain terminal mutually coupled to form a second node. The first and second access transistors each have a gate terminal respectively coupled to a first word line and a second word line. When the first word line provides on signals to turn on the first access transistor, the second low voltage supply provides a first differential voltage simultaneously.
聯絡資訊
承辦人姓名 李曉琪
承辦人電話 03-5715131 #31061
承辦人Email hsiaochi@mx.nthu.edu.tw
我有興趣 BACK