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專利授權區
專利名稱(中)	三維電阻式記憶體結構
專利名稱(英)	THREE-DIMENSIONAL RESISTIVE RANDOM ACCESS MEMORY STRUCTURE
專利家族	中華民國：I819475 美國：2023-0240083(公開號)
專利權人	國立清華大學 100%
發明人	金雅琴,林崇榮,黃耀弘
技術領域	材料化工,工業工程,電子電機

專利摘要(英)
A three-dimensional resistive random access memory structure is proposed. The three-dimensional resistive random access memory structure includes a base layer, a first layer, a second layer, a third layer and a fourth layer. The first layer includes two first conductive layers and a first via. One of the two first conductive layers is electrically connected to the base layer and the first via. The second layer includes three second conductive layers and two second vias, two first resistive elements are formed between one of the second vias and two of the second conductive layers. Another one of the second conductive layers is connected between the first via and another second via. Two of the second conductive layers are extended along a first direction. The third layer includes three third conductive layers and two third vias. Two second resistive elements are formed between one of the third vias and two of the third conductive layers. Another of the third conductive layers is connected between another second via and another third via. Two of the third conductive layers are extended along a second direction. The fourth layer includes a fourth conductive layer, and the fourth conductive layer is connected to two of the third vias. The first direction is vertical to the second direction. Thus, the disposed density of the three-dimensional resistive random access memory structure of the present disclosure can be increased.

專利摘要(英)

A three-dimensional resistive random access memory structure is proposed. The three-dimensional resistive random access memory structure includes a base layer, a first layer, a second layer, a third layer and a fourth layer. The first layer includes two first conductive layers and a first via. One of the two first conductive layers is electrically connected to the base layer and the first via. The second layer includes three second conductive layers and two second vias, two first resistive elements are formed between one of the second vias and two of the second conductive layers. Another one of the second conductive layers is connected between the first via and another second via. Two of the second conductive layers are extended along a first direction. The third layer includes three third conductive layers and two third vias. Two second resistive elements are formed between one of the third vias and two of the third conductive layers. Another of the third conductive layers is connected between another second via and another third via. Two of the third conductive layers are extended along a second direction. The fourth layer includes a fourth conductive layer, and the fourth conductive layer is connected to two of the third vias. The first direction is vertical to the second direction. Thus, the disposed density of the three-dimensional resistive random access memory structure of the present disclosure can be increased.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw