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專利授權區
專利名稱(中)	太赫茲元件的製造方法
專利名稱(英)	METHOD FOR MANUFACTURING TERAHERTZ DEVICE
專利家族	中華民國：I822144 美國：2023-0420606(公開號)
專利權人	國立清華大學 100%
發明人	楊尚樺,陳往謙,吳宗翰
技術領域	材料化工,生化醫藥,通信傳輸,光電光學,電子電機

專利摘要(英)
The present disclosure provides a method for manufacturing a terahertz (THz) device. The method includes a step of forming a light-absorbing structure on a substrate by using a chemical vapor deposition (CVD) process. The substrate includes a semiconductor structure, a sapphire substrate, a quartz substrate, or a combination thereof. The light-absorbing structure includes a semiconductor material, a two-dimensional material, a low-dimensional material, a magnetic material, a topological material, or a combination thereof.

專利摘要(英)

The present disclosure provides a method for manufacturing a terahertz (THz) device. The method includes a step of forming a light-absorbing structure on a substrate by using a chemical vapor deposition (CVD) process. The substrate includes a semiconductor structure, a sapphire substrate, a quartz substrate, or a combination thereof. The light-absorbing structure includes a semiconductor material, a two-dimensional material, a low-dimensional material, a magnetic material, a topological material, or a combination thereof.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw