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專利授權區
專利名稱(中)	鹵化半導體憶阻器與類神經元件
專利名稱(英)	Halide semiconductor memristor and neuromorphic device
專利家族	中華民國：I694623 美國：US 11,107,981 B2
專利權人	國立清華大學 100.00%
發明人	林皓武,陳建宇,陳則瑋,陳立維,王瑋均,許之婷
技術領域	材料化工,資訊工程,電子電機

專利摘要(中)
本發明以一第一電極層、一主動層與一第二電極層組成一鹵化半導體憶阻器，其中該主動層包括形成於該第一電極層之上的一第一氧化物半導體薄膜、形成於該第一氧化物半導體薄膜之上的一鹵化物半導體薄膜、以及形成於該鹵化物半導體薄膜之上的一第二氧化物半導體薄膜。如此設計，可令一第一載子能障形成於該第一氧化物半導體薄膜與該鹵化物半導體薄膜之界面，且令一第二載子能障形成於該第二氧化物半導體薄膜與該鹵化物半導體薄膜之界面。實驗數據證實，本發明之鹵化半導體憶阻器除了可適用於作為一類神經元件之中的複數個人工突觸之外，其還同時具有低操作電壓、可多階調控之電阻狀態、和高動態調整範圍等優點。

專利摘要(中)

本發明以一第一電極層、一主動層與一第二電極層組成一鹵化半導體憶阻器，其中該主動層包括形成於該第一電極層之上的一第一氧化物半導體薄膜、形成於該第一氧化物半導體薄膜之上的一鹵化物半導體薄膜、以及形成於該鹵化物半導體薄膜之上的一第二氧化物半導體薄膜。如此設計，可令一第一載子能障形成於該第一氧化物半導體薄膜與該鹵化物半導體薄膜之界面，且令一第二載子能障形成於該第二氧化物半導體薄膜與該鹵化物半導體薄膜之界面。實驗數據證實，本發明之鹵化半導體憶阻器除了可適用於作為一類神經元件之中的複數個人工突觸之外，其還同時具有低操作電壓、可多階調控之電阻狀態、和高動態調整範圍等優點。

專利摘要(英)
The present invention discloses a halide semiconductor memristor, comprising: a first electrode layer, an active layer and a second electrode layer, wherein the active layer comprises a first oxide semiconductor film formed on the first electrode layer, a halide semiconductor film formed on the first oxide semiconductor film, and a second oxide semiconductor film formed on the halide semiconductor film. By such arrangement, there is a first carrier energy barrier formed between the first oxide semiconductor film and the halide semiconductor film as well as a second carrier energy barrier formed between the second oxide semiconductor film and the halide semiconductor film. Moreover, experimental data have proved that, this halide semiconductor memristor is suitable for being adopted as a plurality of artificial synapses in a neuromorphic device, and exhibits many advantages of capable of being driven by a low operation voltage, having a multi-stage adjustable resistance state, and a wide dynamic range of the adjustable resistance state.

專利摘要(英)

The present invention discloses a halide semiconductor memristor, comprising: a first electrode layer, an active layer and a second electrode layer, wherein the active layer comprises a first oxide semiconductor film formed on the first electrode layer, a halide semiconductor film formed on the first oxide semiconductor film, and a second oxide semiconductor film formed on the halide semiconductor film. By such arrangement, there is a first carrier energy barrier formed between the first oxide semiconductor film and the halide semiconductor film as well as a second carrier energy barrier formed between the second oxide semiconductor film and the halide semiconductor film. Moreover, experimental data have proved that, this halide semiconductor memristor is suitable for being adopted as a plurality of artificial synapses in a neuromorphic device, and exhibits many advantages of capable of being driven by a low operation voltage, having a multi-stage adjustable resistance state, and a wide dynamic range of the adjustable resistance state.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw