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專利授權區

專利授權區
專利名稱(中)	微型探測器及缺陷量測方法
專利名稱(英)	MICRO DETECTOR AND DEFECT MEASUREMENT METHOD
專利家族	中華民國：I723371 大陸：6113317 美國：11,335,609
專利權人	國立清華大學 100%
發明人	蔡宜霈,林本堅,金雅琴,林崇榮
技術領域	光電光學,電子電機

專利摘要(英)
A micro detector includes a substrate, a fin structure, a floating gate, a sensing gate, a reading gate and an antenna layer. The fin structure is located on the substrate. The floating gate is located on the substrate and is perpendicularly across the fin structure. The sensing gate is located on one side of the fin structure. The reading gate is located on the other side of the fin structure. The antenna layer is located above the sensing gate and is connected to the sensing gate. An induced charge is generated when the antenna layer is bombarded by an outside energy source. The induced charge is stored in the floating gate through a coupling effect. A defect distribution during a wafer manufacturing process can be estimated by calculating the induced charge.

專利摘要(英)

A micro detector includes a substrate, a fin structure, a floating gate, a sensing gate, a reading gate and an antenna layer. The fin structure is located on the substrate. The floating gate is located on the substrate and is perpendicularly across the fin structure. The sensing gate is located on one side of the fin structure. The reading gate is located on the other side of the fin structure. The antenna layer is located above the sensing gate and is connected to the sensing gate. An induced charge is generated when the antenna layer is bombarded by an outside energy source. The induced charge is stored in the floating gate through a coupling effect. A defect distribution during a wafer manufacturing process can be estimated by calculating the induced charge.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw