專利授權區國立清華大學國際產學營運總中心 Operations Center for Industry Collaboration

搜尋專利授權區

關鍵字

» 新增關鍵字

選單

專利授權區

專利授權區
專利名稱(中)	鈣鈦礦太陽能電池及其製造方法
專利名稱(英)	PEROVSKITE SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
專利家族	中華民國：I827340 大陸：CN118055663A(公開號)
專利權人	國立清華大學 100.00%
發明人	衛子健,蘇子森,林漢塗,藍翔
技術領域	材料化工,能源科技

專利摘要(中)
本發明公開一種鈣鈦礦太陽能電池及其製造方法。該鈣鈦礦太陽能電池的製造方法包括：於一透明導電電極上濺鍍形成一厚度為20 奈米至120 奈米的一緻密層，該緻密層的材料可為二氧化鈦；於該緻密層上濺鍍形成一厚度為20 奈米至30 奈米的一粗糙層，該粗糙層的材料可為二氧化鈦；於該粗糙層上設置一鈣鈦礦層；於該鈣鈦礦層上設置一空穴傳輸層；於該空穴傳輸層上設置一背電極。

專利摘要(中)

本發明公開一種鈣鈦礦太陽能電池及其製造方法。該鈣鈦礦太陽能電池的製造方法包括：於一透明導電電極上濺鍍形成一厚度為20 奈米至120 奈米的一緻密層，該緻密層的材料可為二氧化鈦；於該緻密層上濺鍍形成一厚度為20 奈米至30 奈米的一粗糙層，該粗糙層的材料可為二氧化鈦；於該粗糙層上設置一鈣鈦礦層；於該鈣鈦礦層上設置一空穴傳輸層；於該空穴傳輸層上設置一背電極。

專利摘要(英)
A perovskite solar cell and a method for manufacturing the same are provided. The method for manufacturing the perovskite solar cell includes steps as follows. A compact layer having a thickness of 20 nm to 120 nm is sputtered to be formed on a transparent conductive electrode, and the compact layer includes titanium dioxide. A rough layer having a thickness of 20 nm to 30 nm is sputtered to be formed on the compact layer, and the rough layer includes titanium dioxide. A perovskite layer is disposed on the rough layer. A hole transport layer is disposed on the perovskite layer. A back electrode is disposed on the hole transport layer.

專利摘要(英)

A perovskite solar cell and a method for manufacturing the same are provided. The method for manufacturing the perovskite solar cell includes steps as follows. A compact layer having a thickness of 20 nm to 120 nm is sputtered to be formed on a transparent conductive electrode, and the compact layer includes titanium dioxide. A rough layer having a thickness of 20 nm to 30 nm is sputtered to be formed on the compact layer, and the rough layer includes titanium dioxide. A perovskite layer is disposed on the rough layer. A hole transport layer is disposed on the perovskite layer. A back electrode is disposed on the hole transport layer.

聯絡資訊
承辦人姓名	李馥如