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專利授權區
專利名稱(中)	鈣鈦礦太陽能電池及鈣鈦礦薄膜層的製作方法
專利名稱(英)	PEROVSKITE SOLAR CELL AND METHOD FOR MANUFACTURING PEROVSKITE THIN FILM LAYER
專利家族	中華民國：I856440 大陸：CN118139503A(公開號)
專利權人	國立清華大學 100%
發明人	衛子健,蘇子森,張鈞傑
技術領域	材料化工,能源科技

專利摘要(英)
A method for manufacturing a perovskite thin film layer is provided. The method includes heating the perovskite film layer with a heat source for a heating time, cooling the perovskite film layer to room temperature, which is 20°C to 28°C. During the passivation treatment time, the perovskite thin film layer is exposed to infrared radiation, so that the perovskite thin film layer forms a passivated perovskite thin film layer. Accordingly, a small amount of organic matter on the surface of the perovskite film layer is affected to generate passivation materials, thus the stability of the perovskite film layer is improved, and the photoelectric conversion efficiency of the perovskite film layer is enhanced. The present invention further provides a perovskite solar cell, which includes the perovskite thin film layer after the aforementioned treatment.

專利摘要(英)

A method for manufacturing a perovskite thin film layer is provided. The method includes heating the perovskite film layer with a heat source for a heating time, cooling the perovskite film layer to room temperature, which is 20°C to 28°C. During the passivation treatment time, the perovskite thin film layer is exposed to infrared radiation, so that the perovskite thin film layer forms a passivated perovskite thin film layer. Accordingly, a small amount of organic matter on the surface of the perovskite film layer is affected to generate passivation materials, thus the stability of the perovskite film layer is improved, and the photoelectric conversion efficiency of the perovskite film layer is enhanced. The present invention further provides a perovskite solar cell, which includes the perovskite thin film layer after the aforementioned treatment.

聯絡資訊
承辦人姓名	李佳玲
承辦人電話	03-5715131 #62300
承辦人Email	cl.lee@mx.nthu.edu.tw