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專利授權區
專利名稱(中) 鈣鈦礦太陽能電池及鈣鈦礦薄膜層的製作方法
專利名稱(英) PEROVSKITE SOLAR CELL AND METHOD FOR MANUFACTURING PEROVSKITE THIN FILM LAYER
專利家族 中華民國:I856440
大陸:CN118139503A(公開號)
專利權人 國立清華大學 100.00%
發明人 衛子健,蘇子森,張鈞傑
技術領域 材料化工,能源科技
專利摘要(中)
本發明公開一種鈣鈦礦薄膜層的製作方法,其包括以熱源加熱鈣鈦礦薄膜層於一加熱時間內,以及將鈣鈦礦薄膜層冷卻至室溫,室溫為20 度C 至28 度C。在一鈍化處理時間內,以紅外線照射鈣鈦礦薄膜層,使鈣鈦礦薄膜層形成鈍化後鈣鈦礦薄膜層。藉此,使鈣鈦礦薄膜層表面含微量的有機物裂解, 生成鈍化性材料,以提升鈣鈦礦薄膜層的穩定性,進而提升光電轉換效率。本發明另提供一種鈣鈦礦太陽能電池,其包括前述鈍化後鈣鈦礦薄膜層。
專利摘要(英)
A method for manufacturing a perovskite thin film layer is provided. The method includes heating the perovskite film layer with a heat source for a heating time, cooling the perovskite film layer to room temperature, which is 20°C to 28°C. During the passivation treatment time, the perovskite thin film layer is exposed to infrared radiation, so that the perovskite thin film layer forms a passivated perovskite thin film layer. Accordingly, a small amount of organic matter on the surface of the perovskite film layer is affected to generate passivation materials, thus the stability of the perovskite film layer is improved, and the photoelectric conversion efficiency of the perovskite film layer is enhanced. The present invention further provides a perovskite solar cell, which includes the perovskite thin film layer after the aforementioned treatment.
聯絡資訊
承辦人姓名 李馥如
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