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專利授權區

專利授權區
專利名稱(中)	半導體元件的製造方法
專利名稱(英)	MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
專利家族	中華民國：I818580 美國：US-2023-0402822-A1(公開號)
專利權人	國立清華大學 100%
發明人	潘犀靈,王啓倫,李鴻生,鄒李昌,林子能
技術領域	光電光學,電子電機

專利摘要(英)
A manufacturing method of a semiconductor device includes: providing a semiconductor stack layer, wherein the semiconductor stack layer includes a first type semiconductor layer, a quantum well layer, and a second type semiconductor layer stacked in sequence; forming an aluminum nitride layer on the second type semiconductor layer; and annealing the aluminum nitride layer to achieve quantum well intermixing.

專利摘要(英)

A manufacturing method of a semiconductor device includes: providing a semiconductor stack layer, wherein the semiconductor stack layer includes a first type semiconductor layer, a quantum well layer, and a second type semiconductor layer stacked in sequence; forming an aluminum nitride layer on the second type semiconductor layer; and annealing the aluminum nitride layer to achieve quantum well intermixing.

聯絡資訊
承辦人姓名	李佳玲
承辦人電話	03-5715131 #62300
承辦人Email	cl.lee@mx.nthu.edu.tw