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專利授權區


專利授權區
專利名稱(英) MEMORY UNIT WITH MULTIPLE WORD LINES FOR NONVOLATILE COMPUTING-IN-MEMORY APPLICATIONS AND CURRENT CALIBRATING METHOD THEREOF
專利家族 美國:11,335,401
專利權人 國立清華大學 100%
發明人 黃彥翔,黃聖博,薛承昕,張孟凡
技術領域 電子電機
專利摘要(英)
A memory unit with multiple word lines for a plurality of non-volatile computing-in-memory applications is configured to compute a plurality of input signals and a plurality of weights. The memory unit includes a non-volatile memory cell array, a replica non-volatile memory cell array and a multi-row current calibration circuit. The non-volatile memory cell array is configured to generate a bit-line current. The replica non-volatile memory cell array includes a plurality of replica non-volatile memory cells and is configured to generate a calibration current. Each of the replica non-volatile memory cells is in the high resistance state. The multi-row current calibration circuit is electrically connected to the non-volatile memory cell array and the replica non-volatile memory cell array. The multi-row current calibration circuit is configured to subtract the calibration current from a dataline current to generate a calibrated dataline current. The dataline current is equal to the bit-line current.
聯絡資訊
承辦人姓名 李曉琪
承辦人電話 03-5715131 #31061
承辦人Email hsiaochi@mx.nthu.edu.tw
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