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專利授權區
專利名稱(中)	Structure and a manufacturing method of a MOSFET with an element of IVA group ion implantation
專利名稱(英)	Structure and a manufacturing method of a MOSFET with an element of IVA group ion implantation
專利家族	中華民國：I722502 大陸：6309719 美國：11,121,235
專利權人	國立清華大學 100%
發明人	黃智方,江政毅,王勝弘,洪嘉慶
技術領域	材料化工,能源科技,電子電機

專利摘要(英)
A structure and a manufacturing method of a metal-oxide-semiconductor field-effect transistor with an element of IVA group ion implantation are disclosed. The element of IVA group ion implantation layer is disposed in a body and close to an interface between a gate oxide layer and the body. The element of IVA group ion implantation layer is utilized to change a property of a channel of the structure.

專利摘要(英)

A structure and a manufacturing method of a metal-oxide-semiconductor field-effect transistor with an element of IVA group ion implantation are disclosed. The element of IVA group ion implantation layer is disposed in a body and close to an interface between a gate oxide layer and the body. The element of IVA group ion implantation layer is utilized to change a property of a channel of the structure.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw