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專利授權區
專利名稱(中)	電極結構及量子點電致發光元件
專利名稱(英)	Electrode structure and quantum dot electroluminescent device
專利家族	中華民國：I803322
專利權人	國立清華大學 100%
發明人	陳學仕,楊璇
技術領域	光電光學

專利摘要(英)
The present invention discloses an electrode structure, comprising: a seed layer, an electrode layer formed on the seed layer and a cover layer formed on the electrode layer. This electrode structure can be applied in the manufacture of a quantum dots electroluminescent device, so as to act as an anode electrode or a cathode electrode of the QD electroluminescent device. Experimental data have revealed that, there is no transmittance imbalance occurring in the QD electroluminescent device using the electrode structure of the present invention. Moreover, the QD electroluminescent device has enhanced in the brightness, total current efficiency and EQE thereof.

專利摘要(英)

The present invention discloses an electrode structure, comprising: a seed layer, an electrode layer formed on the seed layer and a cover layer formed on the electrode layer. This electrode structure can be applied in the manufacture of a quantum dots electroluminescent device, so as to act as an anode electrode or a cathode electrode of the QD electroluminescent device. Experimental data have revealed that, there is no transmittance imbalance occurring in the QD electroluminescent device using the electrode structure of the present invention. Moreover, the QD electroluminescent device has enhanced in the brightness, total current efficiency and EQE thereof.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw