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專利授權區
專利名稱(中)	具有第IVA族離子佈植的金氧半場效電晶體之結構與製造方法
專利名稱(英)	A STRUCTURE AND A MANUFACTURING METHOD OF A MOSFET WITH AN ELEMENT OF IVA GROUP ION IMPLANTATION
專利家族	中華民國：I722502 大陸：6309719 美國：11,121,235
專利權人	國立清華大學 100%
發明人	黃智方,江政毅,王勝弘,洪嘉慶
技術領域	材料化工,能源科技,電子電機

專利摘要(英)
The invention discloses a structure and a manufacturing method of a Metal-Oxide-Semiconductor Field-Effect Transistor with an element of IVA group ion implantation. The element of IVA group ion implantation layer is disposed in the body, and the element of IVA group ion implantation layer is close to the interface between the gate oxide layer and the body; wherein the element of IVA group ion implantation layer is utilized to change a channel property.

專利摘要(英)

The invention discloses a structure and a manufacturing method of a Metal-Oxide-Semiconductor Field-Effect Transistor with an element of IVA group ion implantation. The element of IVA group ion implantation layer is disposed in the body, and the element of IVA group ion implantation layer is close to the interface between the gate oxide layer and the body; wherein the element of IVA group ion implantation layer is utilized to change a channel property.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw