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專利授權區

專利授權區
專利名稱(中)	波導與主動元件的整合結構及其製造方法
專利名稱(英)	INTEGRATED STRUCTURE OF WAVEGUIDE AND ACTIVE COMPONENT AND MANUFACTURING METHOD THEREOF
專利家族	中華民國：I846531 美國：2025-0015210(公開號)
專利權人	國立清華大學 100.00%
發明人	李明昌
技術領域	光電光學,電子電機

專利摘要(中)
本發明提供一種波導與主動元件的整合結構的製造方法，其包含提供含有介電層與半導體層的基板，半導體層包含波導區域、過渡區域及主動元件區域；蝕刻半導體層以形成複數波導溝槽；沉積波導材料於半導體層以形成沉積層，波導材料填入波導溝槽；對沉積層進行研磨製程以暴露出表面；對半導體層進行離子佈植製程以形成第一摻雜部與第二摻雜部；蝕刻波導區域、過渡區域及主動元件區域以形成波導結構、過渡結構及主動元件結構；沉積覆蓋層於介電層；於覆蓋層中形成二導通孔及二接觸墊。藉此，可將波導結構與主動元件結構整合在介電層上。

專利摘要(中)

本發明提供一種波導與主動元件的整合結構的製造方法，其包含提供含有介電層與半導體層的基板，半導體層包含波導區域、過渡區域及主動元件區域；蝕刻半導體層以形成複數波導溝槽；沉積波導材料於半導體層以形成沉積層，波導材料填入波導溝槽；對沉積層進行研磨製程以暴露出表面；對半導體層進行離子佈植製程以形成第一摻雜部與第二摻雜部；蝕刻波導區域、過渡區域及主動元件區域以形成波導結構、過渡結構及主動元件結構；沉積覆蓋層於介電層；於覆蓋層中形成二導通孔及二接觸墊。藉此，可將波導結構與主動元件結構整合在介電層上。

專利摘要(英)
A manufacturing method for an integrated structure of a waveguide and an active component is proposed. The manufacturing method includes providing a substrate including a dielectric layer and a semiconductor layer, and the semiconductor layer includes a waveguide region, a transition region and an active component region; etching the semiconductor layer to form a plurality of waveguide trenches; depositing a waveguide material on the semiconductor layer to form a deposition layer, and the waveguide trenches are filled with the waveguide material; performing a polishing process on the deposition layer to expose a surface; performing an ion implantation process on the semiconductor layer to form a first doped part and a second doped part; etching the waveguide region, the transition region and the active component region to form a waveguide structure, a transition structure and an active component structure; depositing a cover layer on the dielectric layer; forming two via holes and two contact pads in the cover layer. Therefore, the waveguide structure and the active component structure can be integrated on the dielectric layer.

專利摘要(英)

A manufacturing method for an integrated structure of a waveguide and an active component is proposed. The manufacturing method includes providing a substrate including a dielectric layer and a semiconductor layer, and the semiconductor layer includes a waveguide region, a transition region and an active component region; etching the semiconductor layer to form a plurality of waveguide trenches; depositing a waveguide material on the semiconductor layer to form a deposition layer, and the waveguide trenches are filled with the waveguide material; performing a polishing process on the deposition layer to expose a surface; performing an ion implantation process on the semiconductor layer to form a first doped part and a second doped part; etching the waveguide region, the transition region and the active component region to form a waveguide structure, a transition structure and an active component structure; depositing a cover layer on the dielectric layer; forming two via holes and two contact pads in the cover layer. Therefore, the waveguide structure and the active component structure can be integrated on the dielectric layer.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw