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專利授權區

專利授權區
專利名稱(中)	感測裝置及離子檢測方法
專利名稱(英)	SENSING DEVICE AND ION DETECTION METHOD
專利家族	中華民國：I648864 大陸：4764783 美國：11,175,259
專利權人	國立清華大學 100.00%
發明人	陳,奕廷,梅,莉,王,玉麟
技術領域	材料化工,生化醫藥,電子電機

專利摘要(中)
A sensing device including a transistor, at least one response electrode, and a selective membrane is provided. The transistor includes a gate end, a source end, a drain end, and a semiconductor layer, wherein the source end and the drain end are located on the semiconductor layer, and the gate end is located between the source end and the drain end. The at least one response electrode is disposed opposite to the gate end of the transistor and spaced apart from the transistor. The selective membrane is located on the at least one response electrode or on the transistor.

專利摘要(中)

A sensing device including a transistor, at least one response electrode, and a selective membrane is provided. The transistor includes a gate end, a source end, a drain end, and a semiconductor layer, wherein the source end and the drain end are located on the semiconductor layer, and the gate end is located between the source end and the drain end. The at least one response electrode is disposed opposite to the gate end of the transistor and spaced apart from the transistor. The selective membrane is located on the at least one response electrode or on the transistor.

專利摘要(英)
A sensing device including a transistor, at least one response electrode, and a selective membrane is provided. The transistor includes a gate end, a source end, a drain end, and a semiconductor layer, wherein the source end and the drain end are located on the semiconductor layer, and the gate end is located between the source end and the drain end. The at least one response electrode is disposed opposite to the gate end of the transistor and spaced apart from the transistor. The selective membrane is located on the at least one response electrode or on the transistor.

專利摘要(英)

聯絡資訊
承辦人姓名	劉千綺
承辦人電話	03-571-5131 #31181
承辦人Email	chienchi@mx.nthu.edu.tw