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專利名稱(中)	無鉛金屬鹵化物憶阻器及其用途
專利名稱(英)	Lead-free metallic halide memristor and use thereof
專利家族	中華民國：I773596 美國：12,082,514
專利權人	國立清華大學 100.00%
發明人	林皓武,蘇琮凱,鄭維愷,陳承岳
技術領域	材料化工,電子電機

專利摘要(中)
本發明主要揭示一種無鉛金屬鹵化物憶阻器，其包括：一第一電極層、一主動層以及一第二電極層，其中該主動層形成於該第一電極層之上，且該第二電極層形成於該主動層之上。特別地，本發明係以一金屬鹵化物材料製成所述主動層。實驗結果顯示，本發明之無鉛金屬鹵化物憶阻器具有短期促進、短期抑制、長期促進、和長期抑制等突觸可塑性，因此可作一人工突觸元件以及應用於一仿神經型態計算晶片之製造。同時，實驗結果進一步顯示，本發明之無鉛金屬鹵化物憶阻器還具有多階層的電阻態記憶特性，因此可作為一非揮發性記憶元件以及應用於一儲層型態計算晶片之製造。

專利摘要(中)

本發明主要揭示一種無鉛金屬鹵化物憶阻器，其包括：一第一電極層、一主動層以及一第二電極層，其中該主動層形成於該第一電極層之上，且該第二電極層形成於該主動層之上。特別地，本發明係以一金屬鹵化物材料製成所述主動層。實驗結果顯示，本發明之無鉛金屬鹵化物憶阻器具有短期促進、短期抑制、長期促進、和長期抑制等突觸可塑性，因此可作一人工突觸元件以及應用於一仿神經型態計算晶片之製造。同時，實驗結果進一步顯示，本發明之無鉛金屬鹵化物憶阻器還具有多階層的電阻態記憶特性，因此可作為一非揮發性記憶元件以及應用於一儲層型態計算晶片之製造。

專利摘要(英)
The present invention discloses a lead-free metallic halide memristor, comprising: a first electrode layer, an active layer and a second electrode layer. In which, the active layer is formed on the first electrode layer, and the second electrode layer is formed on the active layer. Experimental data have proved that, the lead-free metallic halide memristor includes synaptic plasticity because of showing characteristics of short-term potentiation (STP), short-term depression (STD), long-term potentiation (LTP), long-term depression (LTD) during the experiments. Therefore, the lead-free metallic halide memristor has significant potential for being used as an artificial synaptic device so as to be further applied in the manufacture of a Neuromorphic computing chip. Moreover, experimental data have also proved that, the lead-free metallic halide memristor shows the characteristics of multi-level resistive switching, such that the lead-free metallic halide memristor can also be used as non-volatile memory so as to be further applied in the manufacture of a reservoir computing chip.

專利摘要(英)

The present invention discloses a lead-free metallic halide memristor, comprising: a first electrode layer, an active layer and a second electrode layer. In which, the active layer is formed on the first electrode layer, and the second electrode layer is formed on the active layer. Experimental data have proved that, the lead-free metallic halide memristor includes synaptic plasticity because of showing characteristics of short-term potentiation (STP), short-term depression (STD), long-term potentiation (LTP), long-term depression (LTD) during the experiments. Therefore, the lead-free metallic halide memristor has significant potential for being used as an artificial synaptic device so as to be further applied in the manufacture of a Neuromorphic computing chip. Moreover, experimental data have also proved that, the lead-free metallic halide memristor shows the characteristics of multi-level resistive switching, such that the lead-free metallic halide memristor can also be used as non-volatile memory so as to be further applied in the manufacture of a reservoir computing chip.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw