專利授權區國立清華大學國際產學營運總中心 Operations Center for Industry Collaboration

專利授權區
專利名稱(英)	MULTI-GATE FIELD-EFFECT TRANSISTOR WITH ENHANCED AND ADAPTABLE LOW-FREQUENCY NOISE
專利家族	中華民國：I418034 美國：8,604,549
專利權人	國立清華大學 100%
發明人	邱當榮,龔正,陳新
技術領域	電子電機

專利摘要(英)
A field-effect transistor has an extra gate above a shallow trench isolation (STI) to enhance and to adapt the low-frequency noise induced by an STI-silicon interface. By changing the voltage applied to the STI gate, the field-effect transistor is able to adapt its low-frequency noise over four decades. The field-effect transistor can be fabricated with a standard CMOS logic process without additional masks or process modification.

專利摘要(英)

A field-effect transistor has an extra gate above a shallow trench isolation (STI) to enhance and to adapt the low-frequency noise induced by an STI-silicon interface. By changing the voltage applied to the STI gate, the field-effect transistor is able to adapt its low-frequency noise over four decades. The field-effect transistor can be fabricated with a standard CMOS logic process without additional masks or process modification.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw

電　話：

+886-3-5162301

傳　真：

+886-3-5162275

信　箱：

ocic@my.nthu.edu.tw

地　址：

300044 新竹市光復路二段101號國立清華大學創新育成大樓 111室