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專利授權區

專利授權區
專利名稱(中)	具熱穩定性之自旋軌道扭力式磁性隨存記憶體
專利名稱(英)	SPIN-ORBIT TORQUE MAGNETIC RANDOM ACCESS MEMORY
專利家族	美國：9,929,210
專利權人	國立清華大學 100%
發明人	蔡明翰,黃國峰,賴志煌
技術領域	材料化工,電子電機

專利摘要(中)
A spin-orbit torque magnetic random access memory includes a substrate, and an SOT memory cell disposed on the substrate and including a magnetic free layer including a ferromagnetic first metal layer, an anti-ferromagnetic second metal layer, and a third metal layer for generating spin-Hall effect. The first metal layer has a thickness ranging from 0.5 nm to 1.5 nm and exhibits perpendicular magnetic anisotropy (PMA). The second metal layer has a thickness greater than 6 nm for providing an exchange bias field. The second metal layer is an IrMn layer not undergone out-of-plane magnetic annealing or coating and exhibiting no PMA. The magnetic free layer has a coercive magnetic field (Hc) upon reaching the critical current density, and ︱HEB︱＞︱Hc︱.

專利摘要(中)

A spin-orbit torque magnetic random access memory includes a substrate, and an SOT memory cell disposed on the substrate and including a magnetic free layer including a ferromagnetic first metal layer, an anti-ferromagnetic second metal layer, and a third metal layer for generating spin-Hall effect. The first metal layer has a thickness ranging from 0.5 nm to 1.5 nm and exhibits perpendicular magnetic anisotropy (PMA). The second metal layer has a thickness greater than 6 nm for providing an exchange bias field. The second metal layer is an IrMn layer not undergone out-of-plane magnetic annealing or coating and exhibiting no PMA. The magnetic free layer has a coercive magnetic field (Hc) upon reaching the critical current density, and ︱HEB︱＞︱Hc︱.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw