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專利授權區
專利名稱(中) 鈣鈦礦薄膜的製作方法
專利名稱(英) PEROVCSKITE SOLAR CELL AND METHOD FOR MANUFACTURING PEROVSKITE THIN FILM
專利家族 中華民國:I836830
大陸:CN118284279A(公開號)
專利權人 國立清華大學 100.00%
發明人 衛子健,蘇子森,林承毅
技術領域 材料化工,能源科技
專利摘要(中)
本發明公開一種鈣鈦礦薄膜的製作方法,其包括:製備一含鉛水溶液。添加一聚合物於所述含鉛水溶液中,形成一鈣鈦礦前驅液;所述聚合物的重複 單元中包括具有至少一孤對電子(Lone pair)的氧原子、硫原子或氮原子。將所述鈣鈦礦前驅液製備為一含鉛薄膜。烘乾所述含鉛薄膜。將烘乾後的含 鉛薄膜浸泡於一含碘溶液,反應後形成一碘化鉛薄膜。將所述碘化鉛薄膜浸泡於混合溶液中,所述混合溶液包括甲基氯化胺及甲基碘化胺,所述碘化鉛 薄膜經反應後形成甲基胺基碘化鉛薄膜。本發明還公開一種具有前述甲基胺基碘化鉛薄膜的太陽能電池。
專利摘要(英)
A method for manufacturing perovskite thin film is provided. The method includes: Preparing a lead-containing aqueous solution. Adding a polymer to the lead-containing solution to form a perovskite precursor solution, wherein a repeating unit of the polymer includes an oxygen atom, a sulfur atom or a nitrogen atom having at least one lone pair. Forming a lead-containing thin film with the perovskite precursor solution. Drying the lead-containing thin film. Soaking the lead-containing film in the iodine-containing solution, and a lead iodide film is formed after reaction. Soaking the lead iodide film in a mixed solution which includes methylamine chloride and methylammonium iodide, and the lead iodide film is reacted to form a methylamino lead iodide film. The invention also discloses a solar cell with the aforementioned methylamino lead iodide thin film.
聯絡資訊
承辦人姓名 李馥如
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