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專利授權區
專利名稱(中) 非對稱閘極的穿隧式電晶體
專利名稱(英) TUNNELING TRANSISTOR WITH ASYMMETRIC GATE
專利家族 美國:9,076,764
專利權人 國立清華大學 100.00%
發明人 詹易叡,吳永俊
技術領域 電子電機
專利摘要(中)
An asymmetric gate tunneling transistor includes a substrate, a first-polarity portion, a second-polarity portion, a channel portion, a gate structure and an insulation body. The first-polarity portion and the second-polarity portion are disposed on the substrate. The channel portion is connected with the first-polarity portion and the second-polarity portion, and includes a first section and a second section. The gate structure includes an enveloping portion surrounding the first section, and a flat portion covering one side of the second section away from the substrate. The insulation body includes a first insulation portion disposed between the first section and the enveloping portion, and a second insulation portion disposed between the second section and the flat portion. Through the asymmetric design of the gate structure, the tunneling transistor is offered with features of a high ON current and a low OFF current.
聯絡資訊
承辦人姓名 楊美茹
承辦人電話 03-5715131 #62305
承辦人Email mjyang2@mx.nthu.edu.tw
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