專利授權區國立清華大學國際產學營運總中心 Operations Center for Industry Collaboration

專利授權區
專利名稱(中)	RF POWER TRANSISTOR
專利家族	美國：9,666,685
專利權人	國立清華大學 100%
發明人	連羿韋,鄒權煒,徐碩鴻
技術領域	資訊工程

專利摘要(中)
A radio frequency (RF) power transistor includes a semiconductor heterostructure, a gate electrode, a drain electrode and a source electrode. The drain electrode includes an ohmic contact and a Schottky contact extending from the ohmic contact toward the gate electrode, spaced apart from the gate electrode (4) by a distance (LGD), and having a length (LEXT) being not less than 2 μm and not greater than 4 μm. A ratio of the length (LEXT) to a sum of the length (LEXT) and a distance (LGD) is greater than 0.83 and less than 0.98.

專利摘要(中)

A radio frequency (RF) power transistor includes a semiconductor heterostructure, a gate electrode, a drain electrode and a source electrode. The drain electrode includes an ohmic contact and a Schottky contact extending from the ohmic contact toward the gate electrode, spaced apart from the gate electrode (4) by a distance (LGD), and having a length (LEXT) being not less than 2 μm and not greater than 4 μm. A ratio of the length (LEXT) to a sum of the length (LEXT) and a distance (LGD) is greater than 0.83 and less than 0.98.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw

電　話：

+886-3-5162301

傳　真：

+886-3-5162275

信　箱：

ocic@my.nthu.edu.tw

地　址：

300044 新竹市光復路二段101號國立清華大學創新育成大樓 111室