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專利授權區


專利授權區
專利名稱(英) TWO-DIMENSIONAL SEMICONDUCTOR DEVICE,OPTOELECTRONIC UNIT AND METHOD FOR MAKING THE TWO-DIMENSIONAL SEMICONDUCTOR DEVICE
專利家族 中華民國:I698932
大陸:CN111769201B
美國:11,183,568
專利權人 國立清華大學 100%
發明人 張鋅權,陳俊安,李奕賢,賴映佑,陳奕彤
技術領域 材料化工,光電光學,電子電機
專利摘要(英)
Disclosures of the present invention mainly describe a two-dimensional semiconductor device (TDSD), comprising: a two-dimensional semiconductor material (TDSM) layer, a superacid action layer and a superacid solution. The TDSM layer is made of a transition-metal dichalcogenide, and the superacid action layer is formed on the TDSM layer. Particularly, an oxide material is adopted for making the superacid action layer, such that the superacid solution is subsequently applied to the superacid action layer so as to make the superacid solution gets into the superacid action layer by diffusion effect. Experimental data have proved that, letting the superacid solution diffuse into the superacid action layer can not only apply a chemical treatment to the TDSM layer, but also make the TDSD have a luminosity enhancement. Particularly, the luminosity enhancement would not be reduced even if the TDSD contacts with water and/or organic solution during other subsequent manufacturing processes.
聯絡資訊
承辦人姓名 楊美茹
承辦人電話 03-5715131 #62305
承辦人Email mjyang2@mx.nthu.edu.tw
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