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專利授權區
專利名稱(中)	具超薄結晶性氧化鉿鋯之閘極介電層的鐵電電晶體裝置
專利名稱(英)	Ferroelectric FET device with ultra thin gate dielectric layer of crystallinity HfZrO
專利家族	中華民國：I740465
專利權人	國立清華大學 100.00%
發明人	吳永俊,侯福居,蔡孟儒
技術領域	電子電機

專利摘要(中)
本發明提供一種具超薄結晶性氧化鉿鋯之閘極介電層的鐵電電晶體裝置，包括一具有一設置平面的半導體基底，及一立體式電晶體。立體式電晶體包括一實體通道、一汲極、一源極，及一閘極。實體通道具有一通道本體及一覆蓋通道本體的閘極介電層；通道本體自設置面朝上凸伸或設置於設置面之上，並配置有相反設置的一第一端與一第二端；閘極介電層是由一厚度介於2 nm至5 nm間的結晶性氧化鉿鋯所製成。該汲極自該設置面朝上凸伸以連接該通道本體的第一端。該源極自該設置面朝上凸伸以連接該通道本體的第二端。該閘極覆蓋該實體通道並電性隔絕於該汲極與源極。

專利摘要(中)

本發明提供一種具超薄結晶性氧化鉿鋯之閘極介電層的鐵電電晶體裝置，包括一具有一設置平面的半導體基底，及一立體式電晶體。立體式電晶體包括一實體通道、一汲極、一源極，及一閘極。實體通道具有一通道本體及一覆蓋通道本體的閘極介電層；通道本體自設置面朝上凸伸或設置於設置面之上，並配置有相反設置的一第一端與一第二端；閘極介電層是由一厚度介於2 nm至5 nm間的結晶性氧化鉿鋯所製成。該汲極自該設置面朝上凸伸以連接該通道本體的第一端。該源極自該設置面朝上凸伸以連接該通道本體的第二端。該閘極覆蓋該實體通道並電性隔絕於該汲極與源極。

專利摘要(英)
This invention provides a ferroelectric field effect transistor device which comprises a semiconductor base having a setting plane, and a three-dimensional transistor including a physical channel, a drain, a source, and a gate. Said physical channel has a channel body that is protruding from said setting plane or disposing above the setting plane and is arranged with disposed opposite of a first end and a second end, and a gate dielectric layer that is covering said channel body and made of crystallinity HfZrO with a thickness ranging from 2 nm to 5 nm. Said drain protrudes from said setting plane so as to connect said first end of said channel body. Said source protrudes from said setting plane so as to connect said second end of said channel body. Said gate covers said physical channel and isolates electrically from said drain and said source.

專利摘要(英)

This invention provides a ferroelectric field effect transistor device which comprises a semiconductor base having a setting plane, and a three-dimensional transistor including a physical channel, a drain, a source, and a gate. Said physical channel has a channel body that is protruding from said setting plane or disposing above the setting plane and is arranged with disposed opposite of a first end and a second end, and a gate dielectric layer that is covering said channel body and made of crystallinity HfZrO with a thickness ranging from 2 nm to 5 nm. Said drain protrudes from said setting plane so as to connect said first end of said channel body. Said source protrudes from said setting plane so as to connect said second end of said channel body. Said gate covers said physical channel and isolates electrically from said drain and said source.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw