專利授權區國立清華大學國際產學營運總中心 Operations Center for Industry Collaboration

搜尋專利授權區

關鍵字

» 新增關鍵字

選單

專利授權區

專利授權區
專利名稱(中)	平面金屬氧化物半導體閘極半導體元件結構
專利名稱(英)	Structure of a Planar MOS-gated Semiconductor Device
專利家族	中華民國：202447956(公開號)
專利權人	國立清華大學 100.00%
發明人	黃智方,胡家瑋
技術領域	光電光學,電子電機

專利摘要(中)
本發明揭露一種平面金屬氧化物半導體閘極半導體元件結構，具有一主動區與一非主動區，其中，該主動區包含：複數個六邊形主動區單元，該些六邊形主動區單元緊密相鄰排列以覆蓋該主動區，並形成該主動區的平面；其中，該些六邊形主動區單元環繞該非主動區，且該非主動區單元至少連結該些六邊形主動區單元其中之一；以及該主動區包括金屬氧化物半導體結構反轉形成之通道，而該非主動區則不包括通道。

專利摘要(中)

本發明揭露一種平面金屬氧化物半導體閘極半導體元件結構，具有一主動區與一非主動區，其中，該主動區包含：複數個六邊形主動區單元，該些六邊形主動區單元緊密相鄰排列以覆蓋該主動區，並形成該主動區的平面；其中，該些六邊形主動區單元環繞該非主動區，且該非主動區單元至少連結該些六邊形主動區單元其中之一；以及該主動區包括金屬氧化物半導體結構反轉形成之通道，而該非主動區則不包括通道。

專利摘要(英)
This invention discloses a structure of a planar MOS-gated semiconductor device, comprising an active region and a non -active region. The active region includes multiple hexagonal active region units, which are arranged closely adjacent to each other to cover the active region and form the plane of the active region. Wherein, the hexagonal active region units surround the non -active region, and at least one of the hexagonal active region units is connected to the non-active region unit. The active region includes a channel for med by the metal oxide semiconductor structure inversion, while the non-active region does not include a channel.

專利摘要(英)

This invention discloses a structure of a planar MOS-gated semiconductor device, comprising an active region and a non -active region. The active region includes multiple hexagonal active region units, which are arranged closely adjacent to each other to cover the active region and form the plane of the active region. Wherein, the hexagonal active region units surround the non -active region, and at least one of the hexagonal active region units is connected to the non-active region unit. The active region includes a channel for med by the metal oxide semiconductor structure inversion, while the non-active region does not include a channel.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw